Automatic mercury C-V system

CVmap3093ACAutomatic mercury C-V system

Full-Auto CVMAP systems make it possible to locally form a "soft" electrical contact of the MOS, MIS or Schottky type, thus allowing the analysis of the various intrinsic parameters of the material such as breakdown current, doping density, dielectric constant (K, Qbd, TDDB) etc. Thanks to its cassette/cassette system and the presence of an automatic aligner, the system will be able to map the entire surface of a 12-inch wafer in a fully automated manner without the intervention of the user. The wafer is recovered in its cassette, aligned and positioned on the chuck then measured. Once the measurement is finished, it is automatically put back in its place and in the correct slot. The entire test is carried out in a completely secure manner since no direct contact is possible between the user and the sample during the measurement. Unlike Van Der Paw or 4-point in-line measurements, this technique avoids damaging the surface layer of the material to be analyzed while increasing measurement accuracy.

Measurable areas:

- Pure Silicon
- Silicon carbide (SiC)
- SOI
- Low and high K film
- Very thin oxide layer
- Carbon fiber
- USJ layer
- Up to 300mm in diameter

Specifications:

• Measurable capacitance: 0 to 20nF
• Current measurement range: 50fA to 1mA
• Sample size: from 10x10mm to 300x300mm
• Minimum contact area: 2E-5 cm2

Application :

- Checking the integrity of thin oxides
- Doping density profiling
- Resistivity measurements of semi-insulating materials and carbon fiber
- Pseudo MOST characterization of SOI structures
- Measurement on films with high and low K (USJ layer)
- Studies of ferroelectric samples
- Characterization of new materials such as silicon carbide (SiC)
ABOUT OUR Full-Auto-System
Full-Auto CVMAP systems make it possible to locally form a "soft" electrical contact of the MOS, MIS or Schottky type, thus allowing the analysis of the various intrinsic parameters of the material such as the breakdown current, the doping density, the dielectric constant (K, Qbd, TDDB) etc...
Thanks to its cassette/cassette system and the presence of an automatic aligner, the system will be able to map the entire surface of a 12-inch wafer in a fully automated manner without the intervention of the user. The wafer is recovered in its cassette (foup), aligned and positioned by an handler on the chuck, then measured. Once the measurement is finished, it is automatically remove in its place and in the correct slot. The entire test is carried out in a completely secure manner since no direct contact is possible between the user and the sample during the measurement.
Unlike Van Der Paw or 4-point in-line measurements, this technique avoids damaging the surface layer of the material to be analyzed while increasing measurement accuracy.

Measurable material:

- Pure Silicon
- Silicon carbide (SiC)
- SOI (Silicon On Insulator)
- Low and high K film
- Very thin oxide layer
- Carbon films
- USJ layer
- Silicon oxide

Specifications:

• Measurable capacitance: 0 to 20nF
• Current measurement range: 50fA to 1mA
• Sample size: from 10x10mm to 300x300mm
• Minimum contact area: 2E-5 cm2
• Cartesian or custom mapping
• Several probe head configuration possible: dot, ring/dot, ring/ring/dot
For technical and commercial information, quote, ordering or request of visit by our representative. +33 (0)476 561 617

5 rue de la Verrerie

38120 Le Fontanil-Cornillon

Grenoble / France

Fax : +33(0) 476 757 484

RCS Grenoble B 381 001 171 - APE 4652Z

TVA FR 48 381 001 171