Manual C-V measurement system by mercury contact

CV92MManual C-V measurement system by mercury contact

The manual model CV92M, is a manual station allowing the characterization of semiconductor layer by mercury contact. The sample is positioned on a chuck above a probe containing the drop of mercury. When the user activates the push button, the probe approaches the sample and a tiny drop of mercury is released to ensure electrical contact. The movements of the chuck are motorized and a control panel allows its position to be read in real time. The probe and the chuck connected in BNC, allow communication with an external source-measurement device (which can be supplied). CV92M is perfectly suited for users looking to make mercury contact measurements in a low cost, safe and easy to use way.

Measurable areas:

- Pure Silicon - Silicon carbide (SiC)
- SOI - Low and high K film
- Very thin oxide layer - Carbon fiber
- USJ layer
- Up to 300mm in diameter

Specifications:

• Measurable capacitance: 0 to 20nF
• Current measurement range: 50fA to 1mA
• Sample size: from 10x10mm to 300x300mm
• Minimum contact area: 2E-5 cm2
• Ultra repeatable
• Different type of measurement (1pt, Radius, Line)

Application :

- Checking the integrity of thin oxides
- Doping density profiling
- Resistivity measurements of semi-insulating materials and carbon fiber
- Pseudo MOST characterization of SOI structures
- Measurement on films with high and low K (USJ layer)
- Studies of ferroelectric samples
- Characterization of new materials such as silicon carbide (SiC)
ABOUT OUR Manual System
The manual CVMAP systems make it possible to locally form a "soft" electrical contact of the MOS, MIS or Schottky type, thus allowing the analysis of the various intrinsic parameters of the material such as the breakdown current, the doping density, the dielectric constant (K, Qbd, TDDB) etc...
Unlike Van Der Paw or 4-point in-line measurements, this technique avoids damaging the surface layer of the material to be analyzed.

The frontside of the wafer is placed on the chuck, then by suction, the mercury dot go up from the tank to make the contact with the sample. This is carried out in a completely secure manner since no direct contact is possible between the user and the sample during the measurement.

Measurable material:

- Pure Silicon
- Silicon carbide (SiC)
- SOI (Silicon On Insulator)
- Low and high K film
- Very thin oxide layer
- Carbon films
- USJ layer
- Silicon oxide

Specifications:

• Measurable capacitance: 0 to 20nF
• Current measurement range: 50fA to 1mA
• Sample size: from 10x10mm to 300x300mm
• Minimum contact area: 2E-5 cm2
• Several probe head configuration possible: dot, ring/dot, ring/ring/dot
For technical and commercial information, quote, ordering or request of visit by our representative. +33 (0)476 561 617

5 rue de la Verrerie

38120 Le Fontanil-Cornillon

Grenoble / France

Fax : +33(0) 476 757 484

RCS Grenoble B 381 001 171 - APE 4652Z

TVA FR 48 381 001 171