LAYER CHARACTERIZATIONMercury contact probing systemsSemi-Auto-System

CVmap3093Semi-automatic mercury C-V system

Semi-automatic CVmap systems can perform C(V) and I(V) plots at various frequencies (up to 10MHz) for wide current ranges, at customizable sites. These systems allow the ultra-repeatable measurement of different physical parameters of many types of samples such as SOI, SiC, low and high K films, extremely thin or thick oxides, doped semiconductors, USJ (carrier density) layers, carbon films.
The software part allows the configuration of several types of measurement and the display of the results in a simple and fast way. We therefore have access to the thicknesses of the insulating film, the dielectric constants, the leakage currents, the low dose ion implant densities, the epitaxial doping densities but also the integrity parameters of the oxides such as their Qbd, TDDB, defect density, breakdown voltage and the distribution of the interface traps.
Through connections to an external probe station, a wafer with patterns of Si, Al or another metal grid can also be tested and mapped all in a completely safe manner.

Specifications:

• Measurable capacitance: 0 to 20nF
• Current measurement range: 50fA to 1mA
• Sample size: from 10x10mm to 300x300mm
• Minimum contact area: 2E-5 cm2

Application :

- Checking the integrity of thin oxides
- Doping density profiling
- Resistivity measurements of semi-insulating materials and carbon fiber
- Pseudo MOST characterization of SOI structures
- Measurement on films with high and low K (USJ layer)
- Studies of ferroelectric samples
- Characterization of new materials such as silicon carbide (SiC)

ABOUT OUR Semi-Auto-System

The CVMAP semi-automatic systems make it possible to locally form a "soft" electrical contact of the MOS, MIS or Schottky type, thus allowing the analysis of the various intrinsic parameters of the material such as the breakdown current, the doping density, the dielectric constant (K, Qbd, TDDB) etc.
The wafer is placed manually then thanks to a motorized chuck, the system will be able to map the full surface of the wafer up to 12 inches. This is carried out in a completely secure manner since no direct contact is possible between the user and the sample during the measurement. The mercury is stored inside a tank then by suction it go up to create contact with the sample.
Unlike Van Der Paw or 4-point in-line measurements, this technique avoids damaging the surface layer of the material to be analyzed while increasing measurement accuracy.

Measurable material:

- Pure Silicon
- Silicon carbide (SiC)
- SOI (Silicon On Insulator)
- Low and high K film
- Very thin oxide layer
- Carbon films
- USJ layer
- Silicon oxide

Specifications:

• Measurable capacitance: 0 to 20nF
• Current measurement range: 50fA to 1mA
• Sample size: from 10x10mm to 300x300mm
• Minimum contact area: 2E-5 cm2
• Cartesian or custom mapping
• Several probe head configuration possible: dot, ring/dot, ring/ring/dot