ApplicationCHARACTERIZATION OF ELECTRONIC LAYERSMercury contact probing

Mercury contact probing

The Mercury contact is particularly adapted to CV or IV measurements of very fragile layers not standing the needles pressure, or sheet resistivity of USJ (Ultra-Shallow-Junction) layers on highly doped substrates.
The mercury dot allows a metal soft contact contrary to the classical 4 point probe by needles
• Non destructive probing & No pressure probing
• Highly repeatable contact area, very safe design principle
• Refreshed mercury before each contact insures clean contact and Clean andsafe Mercury handling
• For wafers up to 12" (300mm)
• The CVMap serie systems allow measuring & Charactérizing & monitoring a number of parameters on semiconductors materials including process and furnaces (contamination) monitoring.
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Value for low K & High K
The use of a mercury dot contact allows measuring - characterizing a number of parameters such as :
• Oxide thickness and integrity
• Low K and High K value
• Carrier desnity on EPI and implanted layers
• ...
CV92M
Manual C-V measurement system by mercury contact
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Manual C-V measurement system by mercury contact
The manual model CV92M, is a manual station allowing the characterization of semiconductor layer by mercury contact. The sample is positioned on a chuck above a probe containing the drop of mercury. When the user activates the push button, the probe approaches the sample and a tiny drop of mercury is released to ensure electrical contact. The movements of the chuck are motorized and a control panel makes it possible to read its position in real time. The probe and the chuck connected in BNC, allow communication with an external source-measurement device (which can be supplied).

CV92M is perfectly suited for users looking to make mercury contact measurements in a low cost, safe and easy to use way.

Benefits:

- Wide range of measurable materials (insulation, SOI, SiC.)
- Non-destructive contact
- No preparation required
- Ultra repeatable
- Different type of measurement (1pt, Radius, Line
CVmap3093
Semi-automatic mercury C-V system
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Semi-automatic mercury C-V system
Semi-automatic CVmap systems can perform C-V traces at various frequencies up to 10MHz and/or large current I-V traces at user-specified sites in an ultra repeatable manner.
These systems allow the measurement of different physical parameters of many types of samples such as SOI, SiC, low and high k films, extremely thin or thick oxides, doped semiconductors, USJ layers (carrier density ), carbon films.

The software part allows the configuration of several types of measurement and the display of the results in a simple and fast way. We therefore have access to the thicknesses of the insulating film, to the dielectric constants, to the leakage currents, to the densities of ion implant at low dose, to the densities of epitaxial doping but also to the integrity parameters of the oxides such as their Qbd, TDDB, defect density, breakdown voltage and the distribution of interface traps.

Through connections to an external probe station, a wafer with patterns of Si, Al or other metallic grid can also be tested and mapped. Oven contaminations can be checked with this tool as well.

Benefits:

- Wide range of measurable materials (insulation, SOI, SiC.)
- Non-destructive contact
- No preparation required
- Ultra repeatable
- Different type of measurement (1pt, Radius, Line)
For technical and commercial information, quote, ordering or request of visit by our representative. +33 (0)476 561 617
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