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Manual Hall Effect measurement system

HMS3000Manual Hall Effect measurement system

The HMS3000 is a manual device for Hall effect measurement of resistivity, mobility, carrier concentration, Hall effect coefficient...
It uses the Van Der Pauw method and makes it possible to characterize semiconductor layers of different thicknesses.
This ultra-compact equipment is compatible with several magnet kits (0.31T, 0.37T, 0.51T, 1T) but also with a variable magnet module.
The HMS3000 includes software capable of checking the quality of ohmic contacts by plotting I-V curves.

Features:

- Sample size: 5x5mm to 25x25 mm
- Measurement at two temperatures, ambient (ambient temperature) and 77K
- Magnet
- LN2 chamber with funnel
- ITO reference sample
- Different SPCB sample holders depending on the application

Module # EVM-100
Field: 0.25~0.9T at room temperature
Field: 0.25~0.5T at room temperature and 77K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic
Manual Hall Effect measurement system for high temperatures

HMS3300Manual Hall Effect measurement system for high temperatures

The HMS3300 is a manual device for Hall effect measurement of resistivity, mobility, carrier concentration, Hall effect coefficient...
It uses the Van Der Pauw method and makes it possible to characterize semiconductor layers of different thicknesses.
This ultra-compact equipment is compatible with several magnet kits (0.31T, 0.37T, 0.51T, 1T) but also with a variable magnet module.
The HMS3000 includes software capable of checking the quality of ohmic contacts by plotting I-V curves.

Features:

- Sample size: 5x5mm to 25x25 mm
- Measurement at two temperatures, ambient (ambient temperature) and 77K
- Magnet
- LN2 chamber with funnel
- ITO reference sample
- Different SPCB sample holders depending on the application

Module # EVM-100
Field: 0.25~0.9T at room temperature
Field: 0.25~0.5T at room temperature and 77K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic
Manual Hall Effect measurement system for very high temperatures

HMS3500Manual Hall Effect measurement system for very high temperatures

The HMS3500 is a manual device for Hall effect measurement of resistivity, mobility, carrier concentration, Hall effect coefficient...
It uses the Van Der Pauw method and makes it possible to characterize semiconductor layers of different thicknesses.
This ultra-compact equipment is compatible with several magnet kits (0.31T, 0.37T, 0.51T, 1T) but also with a variable magnet module.
The HMS3000 includes software capable of checking the quality of ohmic contacts by plotting I-V curves.

Features:

- Sample size: 5x5mm to 25x25 mm
- Measurement at two temperatures, ambient (ambient temperature) and 77K
- Magnet
- LN2 chamber with funnel
- ITO reference sample
- Different SPCB sample holders depending on the application

Module # EVM-100
Field: 0.25~0.9T at room temperature
Field: 0.25~0.5T at room temperature and 77K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic
Semi-automatic Hall Effect measurement system with temperature

HMS5000Semi-automatic Hall Effect measurement system with temperature

The HMS5000 model is a compact tabletop system that uses the Van Der Pauw method to extract a number of internal parameters from samples of varying composition and geometry.
Compatible with temperature measurements ranging from 77K to 350K, this equipment makes it possible to characterize the resistivity, mobility, charge carrier density, Hall coefficient of a wide range of thin semiconductor layers.
The HMS5000 includes software capable of checking the quality of ohmic contacts by plotting I-V curves.

Characteristic:

- Sample size: 5x5mm - 30x30mm
- Fixed magnet: 0.55T
- Measurement in cold temperature
- Current range: 1nA - 20mA

Compatibles temperature modules:

- AMP55T-RTSK: Ambient or 77K
- AMP55T-SH80350R: From 77K to 350K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic
Semi-automatic Hall Effect measurement system for high temperatures

HMS5300Semi-automatic Hall Effect measurement system for high temperatures

The HMS5300 model is a compact tabletop system that uses the Van Der Pauw method to extract a number of internal parameters from samples of varying composition and geometry.
Compatible with temperature measurements ranging from 77K to 570K, this equipment makes it possible to characterize the resistivity, mobility, charge carrier density, Hall coefficient of a wide range of thin semiconductor layers.
The HMS5300 includes software capable of checking the quality of ohmic contacts by plotting I-V curves

Characteristic:

- Sample size: 5x5mm - 30x30mm
- Fixed magnet: 0.55T
- Temperature Measurement
- Current range: 1nA - 20mA

Compatibles temperature modules:

- AMP55T-RTSK: Ambient or 77K
- AMP55T-SH80350R: From 77K to 350K
- AHT55T3: From 300K to 570K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component - Nanomaterials
- Sensors, MEMS - Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic
Semi-automatic Hall Effect measurement system for very high temperatures

HMS5500Semi-automatic Hall Effect measurement system for very high temperatures

The HMS5500 model is a compact tabletop system that uses the Van Der Pauw method to extract a number of internal parameters from samples of varying composition and geometry.
Compatible with temperature measurements ranging from 77K to 770K, this equipment makes it possible to characterize the resistivity, mobility, charge carrier density, Hall coefficient of a wide range of thin semiconductor layers.
The HMS5500 includes software capable of checking the quality of ohmic contacts by plotting I-V curves.

Characteristics:

- Sample size: 5x5mm - 30x30mm
- Fixed magnet: 0.55T
- Temperature Measurement
- Current range: 1nA - 20mA

Compatibles temperature modules:

- AMP55T-RTSK: Ambient or 77K
- AMP55T-SH80350R: From 77K to 350K
- AHT55T3: From 300K to 570K
- AHT55T5: From 300K to 770K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component - Nanomaterials
- Sensors, MEMS - Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic
ABOUT OUR Standard systems
Two series of Hall Effect equipments which cover a wide range of applications. Thanks to the Van Der Pauw method and Lorentz force, it makes possible the simultaneous characterization of several parameters under different environmental constraints. The HMS extracts the mobility of charge carriers, the density of majority carriers, the type of doping (P/N), the Hall Voltage / Hall Coefficient or the sheet resistances, resistivity.

HMS3000:

• Fixed temperature: Ambient or 77K (-196°C)
• Several compatible magnet modules (including two variable magnet modules)

HMS5O00:

• Fixed magnet: 0.51T
• Several temperature modules (from 77K to 770K)
• Semi-automatic system

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials
- Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic
For technical and commercial information, quote, ordering or request of visit by our representative. +33 (0)476 561 617

5 rue de la Verrerie

38120 Le Fontanil-Cornillon

Grenoble / France

Fax : +33(0) 476 757 484

RCS Grenoble B 381 001 171 - APE 4652Z

TVA FR 48 381 001 171