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Manual Hall Effect measurement system

HMS3000Manual Hall Effect measurement system

Discover our HMS3000 manual Hall effect system, designed for studying and characterizing the electrical properties of semiconductor materials and thin films. This educational and experimental equipment allows for the precise analysis of charge carrier mobility, carrier concentration, and resistivity of samples.

By measuring the voltages generated by Lorentz forces via its permanent magnet module, the system provides a concrete understanding of electronic transport phenomena and the effects of material doping. Compatible with the Van der Pauw method, it enables reliable measurements on various geometries and thin films.

Robust and easy to use, this manual Hall effect system is ideal for higher education laboratories, research centers, and characterization applications in semiconductor physics and materials science.

It is thus possible to calculate:

• Charge carrier mobility
• Majority carrier density (dopants)
• Doping type (P/N ratio)
• Hall voltage / Hall coefficient
• Surface resistances, resistivity, conductivity

Features:

• Sample size: 5x5 mm to 20x20 mm
• Measurement at two temperatures: ambient and 77 K
• Single or double magnet
• LN2 chamber
• ITO reference sample
• Different SPCB sample holders depending on the application

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic
Semi-automatic Hall Effect measurement system with temperature

HMS5000Semi-automatic Hall Effect measurement system with temperature

The HMS5000 is a motorized Hall effect measurement system dedicated to the electrical characterization of semiconductor materials using the Van der Pauw method. Designed to accommodate samples of varying compositions and geometries, it enables the precise extraction of numerous essential electrical parameters.
Compatible with temperature measurements from 77 K to 350 K, the HMS5000 offers a complete solution for the analysis of semiconductor thin films.

Thanks to its versatility, the system is suitable for both research activities and development and quality control applications in the fields of advanced materials and microelectronics.

The HMS5000 also integrates dedicated software that verifies the quality of ohmic contacts through the automatic plotting of I-V curves, thus ensuring the reliability and reproducibility of measurements. It also allows for the management of magnet movement and temperature ramps to plot the response of your sample.

It is therefore possible to calculate:

• Charge carrier mobility
• Majority carrier density (dopants)
• Doping type (P/N ratio)
• Hall voltage / Hall coefficient
• Surface resistance, resistivity, conductivity

Features:

• Sample size: 5x5mm - 20x20mm
• Motorized dual magnets: 0.5T
• Measurement under temperature: 77K to 350K
• Current range: 1nA - 20mA

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic
Semi-automatic Hall Effect measurement system for high temperatures

HMS5300Semi-automatic Hall Effect measurement system for high temperatures

Discover our HMS5300 semi-automatic Hall effect system, designed for studying and characterizing the electrical properties of semiconductor materials and thin films at varying temperatures. This educational and experimental equipment allows for the precise analysis of charge carrier mobility, carrier concentration, and sample resistivity.

By measuring the voltages generated under the influence of Lorentz forces via its permanent magnet module, the system provides a concrete understanding of electronic transport phenomena and the effects of material doping. Compatible with the Van der Pauw method, it enables reliable measurements on various geometries and thin films.

Robust and easy to use, this manual Hall effect system is ideal for higher education laboratories, research centers, and characterization applications in semiconductor physics and materials science.

Its semi-automatic temperature ramp system and magnetic field measurements make it completely autonomous during the measurement process.

It is therefore possible to calculate:

• Charge carrier mobility
• Majority carrier density (dopants)
• Doping type (P/N ratio)
• Hall voltage / Hall coefficient
• Surface resistance, resistivity, conductivity

Features:

• Sample size: 5x5mm - 20x20mm
• Motorized dual magnets: 0.5T
• Measurement under temperature: 77K to 350K
• Current range: 1nA - 20mA

Compatibles temperature modules:

- AMP55T-RTSK: Ambient or 77K
- AMP55T-SH80350K: From 77K to 350K
- AHT55T3: From 300K to 570K
- AHT55T5: From 300K to 770K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component - Nanomaterials
- Sensors, MEMS - Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic
Semi-automatic Hall Effect measurement system for very high temperatures

HMS5500Semi-automatic Hall Effect measurement system for very high temperatures

Discover our HMS5500 semi-automatic Hall effect system, designed for studying and characterizing the electrical properties of semiconductor materials and thin films at varying temperatures. This educational and experimental equipment allows for the precise analysis of charge carrier mobility, carrier concentration, and sample resistivity.

By measuring the voltages generated under the influence of Lorentz forces via its permanent magnet module, the system provides a concrete understanding of electronic transport phenomena and the effects of material doping. Compatible with the Van der Pauw method, it enables reliable measurements on various geometries and thin films.

Robust and easy to use, this manual Hall effect system is ideal for higher education laboratories, research centers, and characterization applications in semiconductor physics and materials science.

Its semi-automatic temperature ramp system and magnetic field measurements make it completely autonomous during the measurement process.

It is therefore possible to calculate:

• Charge carrier mobility
• Majority carrier density (dopants)
• Doping type (P/N ratio)
• Hall voltage / Hall coefficient
• Surface resistance, resistivity, conductivity

Features:

• Sample size: 5x5mm - 20x20mm
• Motorized dual magnets: 0.5T
• Measurement under temperature: 77K to 350K
• Current range: 1nA - 20mA

Compatibles temperature modules:

- AMP55T-RTSK: Ambient or 77K
- AMP55T-SH80350K: From 77K to 350K
- AHT55T3: From 300K to 570K
- AHT55T5: From 300K to 770K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component - Nanomaterials
- Sensors, MEMS - Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic
ABOUT OUR Standard systems
Our two series of Hall effect analyzers cover a wide range of applications for the advanced characterization of semiconductor materials and thin films.
Based on the Van der Pauw method and the exploitation of Lorentz forces, these systems enable the simultaneous analysis of multiple electrical parameters with high precision, even under varying environmental conditions.

The HMS offers a complete solution for the extraction and analysis of essential electronic properties of materials:

• Charge carrier mobility
• Majority carrier density
• Identification of doping type (P or N)
• Measurement of voltage and Hall coefficient
• Surface resistance and resistivity

Thanks to their versatility and reliability, these instruments meet the needs of both academic research and the requirements of quality control and industrial development.

HMS3000:

• Fixed temperature: Ambient or 77K (-196°C)
• Several compatible magnet modules (including two variable magnet modules)

HMS5000:

• Fixed magnet: 0.51T
• Several temperature modules (from 77K to 770K)
 • Semi-automatic system

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials
- Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic
For technical and commercial information, quote, ordering or request of visit by our representative.
+33 (0)476 561 617

5 rue de la Verrerie

38120 Le Fontanil-Cornillon

Grenoble / France

Fax : +33(0) 476 757 484

RCS Grenoble B 381 001 171 - APE 4652Z

TVA FR 48 381 001 171