HMS7000Photonic Hall Effect measurement system
Our HMS7000 semi-automatic photonic Hall effect system is designed for the study and characterization of the electrical properties of semiconductor materials and thin films under illumination. This educational and experimental equipment allows for the precise analysis of charge carrier mobility, carrier concentration, and resistivity of samples.
By measuring the voltages generated by Lorentz forces via its permanent magnet module, the system provides a concrete understanding of electronic transport phenomena and the effects of material doping. Compatible with the Van der Pauw method, it enables reliable measurements on various geometries and thin films.
Photonic illumination, using three LEDs of different colours, generates additional charge carriers (electrons/holes) in the semiconductor, which enhances or modulates the Hall effect response.
Robust and easy to use, this manual Hall effect system is ideal for higher education laboratories, research centers, and characterization applications in semiconductor physics and materials science.
It allows for the calculation of:
• Charge carrier mobility
• Majority carrier density (dopants)
• Doping type (P/N)
• Hall voltage / Hall coefficient
• Surface resistance, resistivity, and conductivity
Features:
• Fixed magnet: 0.51T
• "Visible illumination" photonic module (LED R,G,B)
• External source adapter (UV, IR)
Applications:
- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials
- Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic
By measuring the voltages generated by Lorentz forces via its permanent magnet module, the system provides a concrete understanding of electronic transport phenomena and the effects of material doping. Compatible with the Van der Pauw method, it enables reliable measurements on various geometries and thin films.
Photonic illumination, using three LEDs of different colours, generates additional charge carriers (electrons/holes) in the semiconductor, which enhances or modulates the Hall effect response.
Robust and easy to use, this manual Hall effect system is ideal for higher education laboratories, research centers, and characterization applications in semiconductor physics and materials science.
It allows for the calculation of:
• Charge carrier mobility
• Majority carrier density (dopants)
• Doping type (P/N)
• Hall voltage / Hall coefficient
• Surface resistance, resistivity, and conductivity
Features:
• Fixed magnet: 0.51T
• "Visible illumination" photonic module (LED R,G,B)
• External source adapter (UV, IR)
Applications:
- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials
- Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic