CHARACTERIZATION OF ELECTRONIC LAYERSGrowing layers by RTP (Rapid Thermal Processor)

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1200°C Rapid Thermal Processor

RTP12001200°C Rapid Thermal Processor

The RTP1200 model is a very easy and powerful RTP system able to reach very high temperatures by using 4 tungsten-halogen lamps.

- Temperature speed adjustment
- System under vacuum
- Gas input possible
- Ideal for contact optimization
ABOUT : Growing layers by RTP (Rapid Thermal Processor)
The RTP process provides a very fast temperature transition within a controlled environment to grow up an electronic semiconductive layers (oxide...) on a semiconductor substrate by a simple and repeatable process.
For technical and commercial information, quote, ordering or request of visit by our representative. +33 (0)476 561 617

5 rue de la Verrerie

38120 Le Fontanil-Cornillon

Grenoble / France

Fax : +33(0) 476 757 484

RCS Grenoble B 381 001 171 - APE 4652Z

TVA FR 48 381 001 171