Growing layers by RTP (Rapid Thermal Processor)

The RTP process provides a very fast temperature transition within a controlled environment to grow up an electronic semiconductive layers (oxide...) on a semiconductor substrate by a simple and repeatable process.
RTP1200
1200°C Rapid Thermal Processor
1200°C Rapid Thermal Processor
The RTP1200 model is a very easy and powerful RTP system able to reach very high temperatures by using 4 tungsten-halogen lamps.

- Temperature speed adjustment
- System under vacuum
- Gas input possible
- Ideal for contact optimization
RTP1300
1200°C Rapid Thermal Processor
1200°C Rapid Thermal Processor
The RTP1300 model is a powerful RTP system able to reach very high temperatures for wafers up to 4" (100mm). 

- Temperature speed adjustment
- System under vacuum
- Gas input possible
- Ideal for contact optimization
For technical and commercial information, quote, ordering or request of visit by our representative. +33 (0)476 561 617

5 rue de la Verrerie

38120 Le Fontanil-Cornillon

Grenoble / France

Fax : +33(0) 476 757 484

RCS Grenoble B 381 001 171 - APE 4652Z

TVA FR 48 381 001 171