CV series measurement systems use a drop of mercury to achieve soft contact on various types of materials. Unlike Van Der Paw or 4-point line measurements, this technique does not damage the surface layer of the material to be analyzed. This electrical contact formed locally can be of the MOS, MIS or Schottky barrier type and therefore allows several types of electrical characterizations requiring no preparation via metal deposition for example.
This technique gives access to measurements of dielectric constant, breakdown current, doping density, etc.
Measurable areas:
- Pure Silicon
- Silicon carbide (SiC)
- SOI
- Low and high K film
- Very thin oxide layer
- Carbon fiber
- USJ layer
- Up to 300mm in diameter
Application :
- Chopped oxide integrity monitoring
- Doping density profiling
- Resistivity measurements of semi-insulating materials and carbon fiber
- Pseudo MOST characterization of SOI structures
- Measurement on films with high and low K (USJ layer)
- Studies of ferroelectric samples
- Characterization of new materials such as silicon carbide (SiC)
