Manual C-V measurement system by mercury contact

CV92MManual C-V measurement system by mercury contact

The manual model CV92M, is a manual station allowing the characterization of semiconductor layer by mercury contact. The sample is positioned on a chuck above a probe containing the drop of mercury. When the user activates the push button, the probe approaches the sample and a tiny drop of mercury is released to ensure electrical contact. The movements of the chuck are motorized and a control panel allows its position to be read in real time. The probe and the chuck connected in BNC, allow communication with an external source-measurement device (which can be supplied). CV92M is perfectly suited for users looking to make mercury contact measurements in a low cost, safe and easy to use way.

Measurable areas:

- Pure Silicon - Silicon carbide (SiC)
- SOI - Low and high K film
- Very thin oxide layer - Carbon fiber
- USJ layer
- Up to 300mm in diameter

Specifications:

• Measurable capacitance: 0 to 20nF
• Current measurement range: 50fA to 1mA
• Sample size: from 10x10mm to 300x300mm
• Minimum contact area: 2E-5 cm2
• Ultra repeatable
• Different type of measurement (1pt, Radius, Line)

Application :

- Checking the integrity of thin oxides
- Doping density profiling
- Resistivity measurements of semi-insulating materials and carbon fiber
- Pseudo MOST characterization of SOI structures
- Measurement on films with high and low K (USJ layer)
- Studies of ferroelectric samples
- Characterization of new materials such as silicon carbide (SiC)
Semi-automatic mercury C-V system

CVmap3093Semi-automatic mercury C-V system

Semi-automatic CVmap systems can perform C(V) and I(V) plots at various frequencies (up to 10MHz) for wide current ranges, at customizable sites. These systems allow the ultra-repeatable measurement of different physical parameters of many types of samples such as SOI, SiC, low and high K films, extremely thin or thick oxides, doped semiconductors, USJ (carrier density) layers, carbon films.
The software part allows the configuration of several types of measurement and the display of the results in a simple and fast way. We therefore have access to the thicknesses of the insulating film, the dielectric constants, the leakage currents, the low dose ion implant densities, the epitaxial doping densities but also the integrity parameters of the oxides such as their Qbd, TDDB, defect density, breakdown voltage and the distribution of the interface traps.
Through connections to an external probe station, a wafer with patterns of Si, Al or another metal grid can also be tested and mapped all in a completely safe manner.

Specifications:


• Measurable capacitance: 0 to 20nF
• Current measurement range: 50fA to 1mA
• Sample size: from 10x10mm to 300x300mm
• Minimum contact area: 2E-5 cm2

Application :

- Checking the integrity of thin oxides
- Doping density profiling
- Resistivity measurements of semi-insulating materials and carbon fiber
- Pseudo MOST characterization of SOI structures
- Measurement on films with high and low K (USJ layer)
- Studies of ferroelectric samples
- Characterization of new materials such as silicon carbide (SiC)
Automatic mercury C-V system

CVmap3093ACAutomatic mercury C-V system

Full-Auto CVMAP systems make it possible to locally form a "soft" electrical contact of the MOS, MIS or Schottky type, thus allowing the analysis of the various intrinsic parameters of the material such as breakdown current, doping density, dielectric constant (K, Qbd, TDDB) etc. Thanks to its cassette/cassette system and the presence of an automatic aligner, the system will be able to map the entire surface of a 12-inch wafer in a fully automated manner without the intervention of the user. The wafer is recovered in its cassette, aligned and positioned on the chuck then measured. Once the measurement is finished, it is automatically put back in its place and in the correct slot. The entire test is carried out in a completely secure manner since no direct contact is possible between the user and the sample during the measurement. Unlike Van Der Paw or 4-point in-line measurements, this technique avoids damaging the surface layer of the material to be analyzed while increasing measurement accuracy.

Measurable areas:

- Pure Silicon
- Silicon carbide (SiC)
- SOI
- Low and high K film
- Very thin oxide layer
- Carbon fiber
- USJ layer
- Up to 300mm in diameter

Specifications:

• Measurable capacitance: 0 to 20nF
• Current measurement range: 50fA to 1mA
• Sample size: from 10x10mm to 300x300mm
• Minimum contact area: 2E-5 cm2

Application :

- Checking the integrity of thin oxides
- Doping density profiling
- Resistivity measurements of semi-insulating materials and carbon fiber
- Pseudo MOST characterization of SOI structures
- Measurement on films with high and low K (USJ layer)
- Studies of ferroelectric samples
- Characterization of new materials such as silicon carbide (SiC)
ABOUT OUR Mercury contact probing systems
CV series measurement systems use a drop of mercury to achieve soft contact on various types of materials. Unlike Van Der Paw or 4-point in-line measurements, this technique avoids damaging the surface layer of the material to be analyzed. This electrical contact formed locally can be a MOS, MIS or Schottky type and therefore allows several way of electrical characterizations requiring no preparation via metal deposition for example.


Measurable parameters:

- Oxides characterization (Dit, Qbd, Vbd, R, Res, I-V, Vfb)
- Dielectric constant (K)
- Oxide thickness by C(V) or I(V)
- Defect density K-f (UHF)
- Ion implantation (dose)
- Implantation penetration depth
- Dopant density (epitaxy or bulk)
- Mapping of USJ layer
- Pseudo MOST test
- Ferroelectric characterization (K-E, P-E, K-f, K-T, Hysteresis)
- Lifetime of dopants

Measurable material:

- Pure Silicon
- Silicon carbide (SiC)
- SOI (Silicon On Insulator)
- Low and high K film
- Very thin oxide layer
- Carbon films
- USJ layer
- Silicon oxide

Applications:

• Oxide integrity monitoring
• Doping density mapping
• Resistivity measurements of semi-insulating materials and carbon fiber
• Pseudo MOST characterization of SOI structures
• Measurement on films with high and low K (USJ layer)
• Studies of ferroelectric samples
• Characterization of new materials such as silicon carbide (SiC)
For technical and commercial information, quote, ordering or request of visit by our representative. +33 (0)476 561 617

5 rue de la Verrerie

38120 Le Fontanil-Cornillon

Grenoble / France

Fax : +33(0) 476 757 484

RCS Grenoble B 381 001 171 - APE 4652Z

TVA FR 48 381 001 171