LAYER CHARACTERIZATIONHall effect measurement systems

HMS3000Manual Hall Effect measurement system

The HMS3000 is a manual device for Hall effect measurement of resistivity, mobility, carrier concentration, Hall effect coefficient...
It uses the Van Der Pauw method and makes it possible to characterize semiconductor layers of different thicknesses.
This ultra-compact equipment is compatible with several magnet kits (0.31T, 0.37T, 0.51T, 1T) but also with a variable magnet module.
The HMS3000 includes software capable of checking the quality of ohmic contacts by plotting I-V curves.

Features:

- Sample size: 5x5mm to 25x25 mm
- Measurement at two temperatures, ambient (ambient temperature) and 77K
- Magnet
- LN2 chamber with funnel
- ITO reference sample
- Different SPCB sample holders depending on the application

Module # EVM-100
Field: 0.25~0.9T at room temperature
Field: 0.25~0.5T at room temperature and 77K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

HMS3300Manual Hall Effect measurement system for high temperatures

The HMS3300 is a manual device for Hall effect measurement of resistivity, mobility, carrier concentration, Hall effect coefficient...
It uses the Van Der Pauw method and makes it possible to characterize semiconductor layers of different thicknesses.
This ultra-compact equipment is compatible with several magnet kits (0.31T, 0.37T, 0.51T, 1T) but also with a variable magnet module.
The HMS3000 includes software capable of checking the quality of ohmic contacts by plotting I-V curves.

Features:

- Sample size: 5x5mm to 25x25 mm
- Measurement at two temperatures, ambient (ambient temperature) and 77K
- Magnet
- LN2 chamber with funnel
- ITO reference sample
- Different SPCB sample holders depending on the application

Module # EVM-100
Field: 0.25~0.9T at room temperature
Field: 0.25~0.5T at room temperature and 77K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

HMS3500Manual Hall Effect measurement system for very high temperatures

The HMS3500 is a manual device for Hall effect measurement of resistivity, mobility, carrier concentration, Hall effect coefficient...
It uses the Van Der Pauw method and makes it possible to characterize semiconductor layers of different thicknesses.
This ultra-compact equipment is compatible with several magnet kits (0.31T, 0.37T, 0.51T, 1T) but also with a variable magnet module.
The HMS3000 includes software capable of checking the quality of ohmic contacts by plotting I-V curves.

Features:

- Sample size: 5x5mm to 25x25 mm
- Measurement at two temperatures, ambient (ambient temperature) and 77K
- Magnet
- LN2 chamber with funnel
- ITO reference sample
- Different SPCB sample holders depending on the application

Module # EVM-100
Field: 0.25~0.9T at room temperature
Field: 0.25~0.5T at room temperature and 77K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

HMS5000Semi-automatic Hall Effect measurement system with temperature

The HMS5000 model is a compact tabletop system that uses the Van Der Pauw method to extract a number of internal parameters from samples of varying composition and geometry.
Compatible with temperature measurements ranging from 77K to 350K, this equipment makes it possible to characterize the resistivity, mobility, charge carrier density, Hall coefficient of a wide range of thin semiconductor layers.
The HMS5000 includes software capable of checking the quality of ohmic contacts by plotting I-V curves.

Characteristic:

- Sample size: 5x5mm - 30x30mm
- Fixed magnet: 0.55T
- Measurement in cold temperature
- Current range: 1nA - 20mA

Compatibles temperature modules:

- AMP55T-RTSK: Ambient or 77K
- AMP55T-SH80350R: From 77K to 350K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

HMS5300Semi-automatic Hall Effect measurement system for high temperatures

The HMS5300 model is a compact tabletop system that uses the Van Der Pauw method to extract a number of internal parameters from samples of varying composition and geometry.
Compatible with temperature measurements ranging from 77K to 570K, this equipment makes it possible to characterize the resistivity, mobility, charge carrier density, Hall coefficient of a wide range of thin semiconductor layers.
The HMS5300 includes software capable of checking the quality of ohmic contacts by plotting I-V curves

Characteristic:

- Sample size: 5x5mm - 30x30mm
- Fixed magnet: 0.55T
- Temperature Measurement
- Current range: 1nA - 20mA

Compatibles temperature modules:

- AMP55T-RTSK: Ambient or 77K
- AMP55T-SH80350R: From 77K to 350K
- AHT55T3: From 300K to 570K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component - Nanomaterials
- Sensors, MEMS - Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

HMS5500Semi-automatic Hall Effect measurement system for very high temperatures

The HMS5500 model is a compact tabletop system that uses the Van Der Pauw method to extract a number of internal parameters from samples of varying composition and geometry.
Compatible with temperature measurements ranging from 77K to 770K, this equipment makes it possible to characterize the resistivity, mobility, charge carrier density, Hall coefficient of a wide range of thin semiconductor layers.
The HMS5500 includes software capable of checking the quality of ohmic contacts by plotting I-V curves.

Characteristics:

- Sample size: 5x5mm - 30x30mm
- Fixed magnet: 0.55T
- Temperature Measurement
- Current range: 1nA - 20mA

Compatibles temperature modules:

- AMP55T-RTSK: Ambient or 77K
- AMP55T-SH80350R: From 77K to 350K
- AHT55T3: From 300K to 570K
- AHT55T5: From 300K to 770K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component - Nanomaterials
- Sensors, MEMS - Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

HCS10Hall effect measurement system with electro-magnet

The HCS10 is a Hall effect measurement system with electromagnet which, using the Van Der Pauw method, makes it possible to measure mobilities, densities, Hall coefficient and resistivity in different types of materials. The water-cooled electromagnet works in combination with a programmable power supply and a current inversion switch very useful for characterizing certain special substrates (with low mobility of charge carriers for example)

Specifications:

• AC/DC current
• Fields: -0.9 to 0.9T
• Max Frequency: 0.1Hz
• Temperature: 77K to 870K
• I(V) curve plotting
• Compact system

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials
- Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Electronic photovoltaic

HCS100Hall effect measurement system with Halbach configuration

The HCS100 uses a magnet in Halbach configuration (permanent magnet in donut configuration), in order to apply a DC or AC magnetic field to the sample. The Halbach array coil has a lower intrinsic inductance than conventional coils. The Halbach array coil can therefore produce a relatively high magnetic field at a lower inductance and hence a higher power factor compared to conventional coils.
This system is therefore a powerful tool for the characterization of demanding samples, as noise measurements can easily be suppressed in most cases.

Specifications:

• AC/DC current
• Fields: -0.5T to 0.5T
• Temperature: 77K to 770K
• I(V) curve plotting
• Compact system

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials
- Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

HMS7000Photonic Hall Effect measurement system

The HMS7000 Photonics will this time use the Van Der Pauw method under illumination to measure the response of several internal parameters of the material under different photonic stresses. This equipment is perfectly suited to the world of photovoltaics and the study of photoelectric semiconductors.

As for the other HMS series, it will characterize:

• Mobility of charge carriers
• Density of majority carriers
• The type of doping (P/N)
• Hall Voltage / Hall Coefficient
• Surface resistances, resistivity

Specifications:

• Fixed magnet: 0.51T
• "Visible illumination" photonic module (LED R,G,B)
• External source adapter (UV, IR)

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials
- Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes -
Photovoltaic

SPCBSample holder for HMS series

These easy probe holders are composed of a small pcb on which the sample under test is held using spring clips.
The sample to measure is square with a pretty small size.

- Four individually adjustable gold plated spring needles allow a good electrical contact on each corner (may need a point of Indium solder deposited for better contact, not always necessary, depends on sample material).
- No soldering necessary

ABOUT OUR Hall effect measurement systems

Hall Effect measurement systems allow the ultra-fast characterization of several intrinsic parameters of conductive and semi-conductive materials.
They use the Van Der Pauw method, which is perfectly adapted to thin film measurements and the Lorentz force in order to monitor around ten characteristics simultaneously under several environmental constraints.

It is thus possible to calculate:

• Sheet resistances, resistivity, conductivity
• Mobility of charge carriers
• Density of majority carriers
• The type of doping (P/N)
• Hall Voltage / Hall Coefficient

Main characteristics:

• Variable sample size from 5x5mm to 30x30mm
• Possible temperature measurement: 77K - 770K (-196°C to 500°C)
• Measurement possible in variable magnetic fields: 0.25T - 0.9T
• Electromagnet
• Measurement of the Seebeck effect
• Magnet in Halbach configuration
• Measurement possible under illumination: R,G,B via Led or UV/IR via external source adapter
• Tracing of I(V), I(R) curve - Allows to check the quality of the ohmic contact
• Data export possible in .csv (Excel)
• Accuracy & Reproducibility: Van Der Pauw method optimized electrical noise
• Ultra-compact table system

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials
- Sensors, MEMS
- Conductive polymers
- Oxide deposit
- Ceramics & Glass
- Batteries
- Electrodes
- Photovoltaic