LAYER CHARACTERIZATIONHall effect measurement systems

HMS3000Manual Hall Effect measurement system

Discover our HMS3000 manual Hall effect system, designed for studying and characterizing the electrical properties of semiconductor materials and thin films. This educational and experimental equipment allows for the precise analysis of charge carrier mobility, carrier concentration, and resistivity of samples.

By measuring the voltages generated by Lorentz forces via its permanent magnet module, the system provides a concrete understanding of electronic transport phenomena and the effects of material doping. Compatible with the Van der Pauw method, it enables reliable measurements on various geometries and thin films.

Robust and easy to use, this manual Hall effect system is ideal for higher education laboratories, research centers, and characterization applications in semiconductor physics and materials science.

It is thus possible to calculate:

• Charge carrier mobility
• Majority carrier density (dopants)
• Doping type (P/N ratio)
• Hall voltage / Hall coefficient
• Surface resistances, resistivity, conductivity

Features:

• Sample size: 5x5 mm to 20x20 mm
• Measurement at two temperatures: ambient and 77 K
• Single or double magnet
• LN2 chamber
• ITO reference sample
• Different SPCB sample holders depending on the application

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

HMS5000Semi-automatic Hall Effect measurement system with temperature

The HMS5000 is a motorized Hall effect measurement system dedicated to the electrical characterization of semiconductor materials using the Van der Pauw method. Designed to accommodate samples of varying compositions and geometries, it enables the precise extraction of numerous essential electrical parameters.
Compatible with temperature measurements from 77 K to 350 K, the HMS5000 offers a complete solution for the analysis of semiconductor thin films.

Thanks to its versatility, the system is suitable for both research activities and development and quality control applications in the fields of advanced materials and microelectronics.

The HMS5000 also integrates dedicated software that verifies the quality of ohmic contacts through the automatic plotting of I-V curves, thus ensuring the reliability and reproducibility of measurements. It also allows for the management of magnet movement and temperature ramps to plot the response of your sample.

It is therefore possible to calculate:

• Charge carrier mobility
• Majority carrier density (dopants)
• Doping type (P/N ratio)
• Hall voltage / Hall coefficient
• Surface resistance, resistivity, conductivity

Features:

• Sample size: 5x5mm - 20x20mm
• Motorized dual magnets: 0.5T
• Measurement under temperature: 77K to 350K
• Current range: 1nA - 20mA

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

HMS5300Semi-automatic Hall Effect measurement system for high temperatures

Discover our HMS5300 semi-automatic Hall effect system, designed for studying and characterizing the electrical properties of semiconductor materials and thin films at varying temperatures. This educational and experimental equipment allows for the precise analysis of charge carrier mobility, carrier concentration, and sample resistivity.

By measuring the voltages generated under the influence of Lorentz forces via its permanent magnet module, the system provides a concrete understanding of electronic transport phenomena and the effects of material doping. Compatible with the Van der Pauw method, it enables reliable measurements on various geometries and thin films.

Robust and easy to use, this manual Hall effect system is ideal for higher education laboratories, research centers, and characterization applications in semiconductor physics and materials science.

Its semi-automatic temperature ramp system and magnetic field measurements make it completely autonomous during the measurement process.

It is therefore possible to calculate:

• Charge carrier mobility
• Majority carrier density (dopants)
• Doping type (P/N ratio)
• Hall voltage / Hall coefficient
• Surface resistance, resistivity, conductivity

Features:

• Sample size: 5x5mm - 20x20mm
• Motorized dual magnets: 0.5T
• Measurement under temperature: 77K to 350K
• Current range: 1nA - 20mA

Compatibles temperature modules:

- AMP55T-RTSK: Ambient or 77K
- AMP55T-SH80350K: From 77K to 350K
- AHT55T3: From 300K to 570K
- AHT55T5: From 300K to 770K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component - Nanomaterials
- Sensors, MEMS - Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

HMS5500Semi-automatic Hall Effect measurement system for very high temperatures

Discover our HMS5500 semi-automatic Hall effect system, designed for studying and characterizing the electrical properties of semiconductor materials and thin films at varying temperatures. This educational and experimental equipment allows for the precise analysis of charge carrier mobility, carrier concentration, and sample resistivity.

By measuring the voltages generated under the influence of Lorentz forces via its permanent magnet module, the system provides a concrete understanding of electronic transport phenomena and the effects of material doping. Compatible with the Van der Pauw method, it enables reliable measurements on various geometries and thin films.

Robust and easy to use, this manual Hall effect system is ideal for higher education laboratories, research centers, and characterization applications in semiconductor physics and materials science.

Its semi-automatic temperature ramp system and magnetic field measurements make it completely autonomous during the measurement process.

It is therefore possible to calculate:

• Charge carrier mobility
• Majority carrier density (dopants)
• Doping type (P/N ratio)
• Hall voltage / Hall coefficient
• Surface resistance, resistivity, conductivity

Features:

• Sample size: 5x5mm - 20x20mm
• Motorized dual magnets: 0.5T
• Measurement under temperature: 77K to 350K
• Current range: 1nA - 20mA

Compatibles temperature modules:

- AMP55T-RTSK: Ambient or 77K
- AMP55T-SH80350K: From 77K to 350K
- AHT55T3: From 300K to 570K
- AHT55T5: From 300K to 770K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component - Nanomaterials
- Sensors, MEMS - Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

HMS7000Photonic Hall Effect measurement system

Our HMS7000 semi-automatic photonic Hall effect system is designed for the study and characterization of the electrical properties of semiconductor materials and thin films under illumination. This educational and experimental equipment allows for the precise analysis of charge carrier mobility, carrier concentration, and resistivity of samples.

By measuring the voltages generated by Lorentz forces via its permanent magnet module, the system provides a concrete understanding of electronic transport phenomena and the effects of material doping. Compatible with the Van der Pauw method, it enables reliable measurements on various geometries and thin films.

Photonic illumination, using three LEDs of different colours, generates additional charge carriers (electrons/holes) in the semiconductor, which enhances or modulates the Hall effect response.

Robust and easy to use, this manual Hall effect system is ideal for higher education laboratories, research centers, and characterization applications in semiconductor physics and materials science.

It allows for the calculation of:

• Charge carrier mobility
• Majority carrier density (dopants)
• Doping type (P/N)
• Hall voltage / Hall coefficient
• Surface resistance, resistivity, and conductivity

Features:

• Fixed magnet: 0.51T
• "Visible illumination" photonic module (LED R,G,B)
• External source adapter (UV, IR)

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials
- Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

SPCBSample holder for HMS series

Optimize your characterization campaigns with our sample holders specifically designed for Hall effect measurements.

Equipped with four gold-plated spring contacts (pogo pins), it ensures reliable, reproducible, and damage-free contact with samples.
Thanks to the controlled contact force of the spring contacts, sample installation is quick and requires no soldering or permanent fixing. This design guarantees excellent electrical stability while compensating for variations in thickness and dimensional tolerances of the materials being tested.

ABOUT OUR Hall effect measurement systems

Hall effect measurement systems offer ultra-fast, high-precision characterization of the intrinsic properties of conductive and semiconductor materials. Using the Van der Pauw method, particularly well-suited to thin films, they enable efficient analysis of the electrical performance of complex materials, even those with intricate geometries.

By harnessing Lorentz forces, these instruments simultaneously measure and monitor a dozen key parameters: carrier mobility, concentration, resistivity, conductivity, Hall coefficient, and many other essential characteristics for research, development, and quality control.

Designed to meet the demands of laboratories and advanced industrial environments, Hall effect measurement systems guarantee reliable results under various environmental constraints: temperature, magnetic field, controlled atmosphere, or vacuum.
They are an essential solution for accelerating innovation in the fields of semiconductors, advanced materials, and next-generation electronics.

It is thus possible to calculate:

• Sheet resistances, resistivity, conductivity
• Mobility of charge carriers
• Density of majority carriers
• The type of doping (P/N)
• Hall Voltage / Hall Coefficient

Main characteristics:

• Variable sample size from 5x5mm to 20x20mm
• Possible temperature measurement: 77K - 770K (-196°C to 500°C)
• Measurement possible in variable magnetic fields: 0.25T - 0.9T
• Measurement possible under illumination: R,G,B via Led or UV/IR via external source adapter
• Tracing of I(V), I(R) curve - Allows to check the quality of the ohmic contact
• Data export possible in .csv (Excel)
• Accuracy & Reproducibility: Van Der Pauw method optimized electrical noise
• Ultra-compact table system

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials
- Sensors, MEMS
- Conductive polymers
- Oxide deposit
- Ceramics & Glass
- Batteries
- Electrodes
- Photovoltaic

For technical and commercial information, quote, ordering or request of visit by our representative.
+33 (0)476 561 617

5 rue de la Verrerie

38120 Le Fontanil-Cornillon

Grenoble / France

Fax : +33(0) 476 757 484

RCS Grenoble B 381 001 171 - APE 4652Z

TVA FR 48 381 001 171