ABOUT OUR Hall effect measurement systems
Hall effect measurement systems offer ultra-fast, high-precision characterization of the intrinsic properties of conductive and semiconductor materials. Using the Van der Pauw method, particularly well-suited to thin films, they enable efficient analysis of the electrical performance of complex materials, even those with intricate geometries.
By harnessing Lorentz forces, these instruments simultaneously measure and monitor a dozen key parameters: carrier mobility, concentration, resistivity, conductivity, Hall coefficient, and many other essential characteristics for research, development, and quality control.
Designed to meet the demands of laboratories and advanced industrial environments, Hall effect measurement systems guarantee reliable results under various environmental constraints: temperature, magnetic field, controlled atmosphere, or vacuum.
They are an essential solution for accelerating innovation in the fields of semiconductors, advanced materials, and next-generation electronics.
It is thus possible to calculate:
• Sheet resistances, resistivity, conductivity
• Mobility of charge carriers
• Density of majority carriers
• The type of doping (P/N)
• Hall Voltage / Hall Coefficient
Main characteristics:
• Variable sample size from 5x5mm to 20x20mm
• Possible temperature measurement: 77K - 770K (-196°C to 500°C)
• Measurement possible in variable magnetic fields: 0.25T - 0.9T
• Measurement possible under illumination: R,G,B via Led or UV/IR via external source adapter
• Tracing of I(V), I(R) curve - Allows to check the quality of the ohmic contact
• Data export possible in .csv (Excel)
• Accuracy & Reproducibility: Van Der Pauw method optimized electrical noise
• Ultra-compact table system
Applications:
- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials
- Sensors, MEMS
- Conductive polymers
- Oxide deposit
- Ceramics & Glass
- Batteries
- Electrodes
- Photovoltaic
