LAYER CHARACTERIZATIONRTP (Rapid Thermal Processing)

RTP1200 1200°C Rapid Thermal Processor

Part Number

RTP1200

Designation

1200°C Rapid Thermal Processor

APPLICATIONS

Growing layers by RTP (Rapid Thermal Processor)

Description

The RTP1200 model is a very easy and powerful RTP system able to reach very high temperatures by using 4 tungsten-halogen lamps.

- Temperature speed adjustment
- System under vacuum
- Gas input possible
- Ideal for contact optimization

DOCUMENTS

RTP1200 brochure (pdf)

Technical Specifications

Sample size

15x20 mm

Maximum temperature

1200 °C

Rise time

100°C/s °C/s

Accuracy

/- 0.3 °C °C

Lamp type

Halogen 4x150W@15V (600W total)

Maximum current

40 A

Voltage supply

230V monophase V

Cooling

By fan

Gas inlet

N2 and O2 (controller not included)

Associated products

HMS5000Semi-automatic Hall Effect measurement system with temperature

The HMS5000 is a motorized Hall effect measurement system dedicated to the electrical characterization of semiconductor materials using the Van der Pauw method. Designed to accommodate samples of varying compositions and geometries, it enables the precise extraction of numerous essential electrical parameters.
Compatible with temperature measurements from 77 K to 350 K, the HMS5000 offers a complete solution for the analysis of semiconductor thin films.

Thanks to its versatility, the system is suitable for both research activities and development and quality control applications in the fields of advanced materials and microelectronics.

The HMS5000 also integrates dedicated software that verifies the quality of ohmic contacts through the automatic plotting of I-V curves, thus ensuring the reliability and reproducibility of measurements. It also allows for the management of magnet movement and temperature ramps to plot the response of your sample.

It is therefore possible to calculate:

• Charge carrier mobility
• Majority carrier density (dopants)
• Doping type (P/N ratio)
• Hall voltage / Hall coefficient
• Surface resistance, resistivity, conductivity

Features:

• Sample size: 5x5mm - 20x20mm
• Motorized dual magnets: 0.5T
• Measurement under temperature: 77K to 350K
• Current range: 1nA - 20mA

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

HMS5300Semi-automatic Hall Effect measurement system for high temperatures

Discover our HMS5300 semi-automatic Hall effect system, designed for studying and characterizing the electrical properties of semiconductor materials and thin films at varying temperatures. This educational and experimental equipment allows for the precise analysis of charge carrier mobility, carrier concentration, and sample resistivity.

By measuring the voltages generated under the influence of Lorentz forces via its permanent magnet module, the system provides a concrete understanding of electronic transport phenomena and the effects of material doping. Compatible with the Van der Pauw method, it enables reliable measurements on various geometries and thin films.

Robust and easy to use, this manual Hall effect system is ideal for higher education laboratories, research centers, and characterization applications in semiconductor physics and materials science.

Its semi-automatic temperature ramp system and magnetic field measurements make it completely autonomous during the measurement process.

It is therefore possible to calculate:

• Charge carrier mobility
• Majority carrier density (dopants)
• Doping type (P/N ratio)
• Hall voltage / Hall coefficient
• Surface resistance, resistivity, conductivity

Features:

• Sample size: 5x5mm - 20x20mm
• Motorized dual magnets: 0.5T
• Measurement under temperature: 77K to 350K
• Current range: 1nA - 20mA

Compatibles temperature modules:

- AMP55T-RTSK: Ambient or 77K
- AMP55T-SH80350K: From 77K to 350K
- AHT55T3: From 300K to 570K
- AHT55T5: From 300K to 770K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component - Nanomaterials
- Sensors, MEMS - Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

HMS5500Semi-automatic Hall Effect measurement system for very high temperatures

Discover our HMS5500 semi-automatic Hall effect system, designed for studying and characterizing the electrical properties of semiconductor materials and thin films at varying temperatures. This educational and experimental equipment allows for the precise analysis of charge carrier mobility, carrier concentration, and sample resistivity.

By measuring the voltages generated under the influence of Lorentz forces via its permanent magnet module, the system provides a concrete understanding of electronic transport phenomena and the effects of material doping. Compatible with the Van der Pauw method, it enables reliable measurements on various geometries and thin films.

Robust and easy to use, this manual Hall effect system is ideal for higher education laboratories, research centers, and characterization applications in semiconductor physics and materials science.

Its semi-automatic temperature ramp system and magnetic field measurements make it completely autonomous during the measurement process.

It is therefore possible to calculate:

• Charge carrier mobility
• Majority carrier density (dopants)
• Doping type (P/N ratio)
• Hall voltage / Hall coefficient
• Surface resistance, resistivity, conductivity

Features:

• Sample size: 5x5mm - 20x20mm
• Motorized dual magnets: 0.5T
• Measurement under temperature: 77K to 350K
• Current range: 1nA - 20mA

Compatibles temperature modules:

- AMP55T-RTSK: Ambient or 77K
- AMP55T-SH80350K: From 77K to 350K
- AHT55T3: From 300K to 570K
- AHT55T5: From 300K to 770K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component - Nanomaterials
- Sensors, MEMS - Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

HMS7000Photonic Hall Effect measurement system

Our HMS7000 semi-automatic photonic Hall effect system is designed for the study and characterization of the electrical properties of semiconductor materials and thin films under illumination. This educational and experimental equipment allows for the precise analysis of charge carrier mobility, carrier concentration, and resistivity of samples.

By measuring the voltages generated by Lorentz forces via its permanent magnet module, the system provides a concrete understanding of electronic transport phenomena and the effects of material doping. Compatible with the Van der Pauw method, it enables reliable measurements on various geometries and thin films.

Photonic illumination, using three LEDs of different colours, generates additional charge carriers (electrons/holes) in the semiconductor, which enhances or modulates the Hall effect response.

Robust and easy to use, this manual Hall effect system is ideal for higher education laboratories, research centers, and characterization applications in semiconductor physics and materials science.

It allows for the calculation of:

• Charge carrier mobility
• Majority carrier density (dopants)
• Doping type (P/N)
• Hall voltage / Hall coefficient
• Surface resistance, resistivity, and conductivity

Features:

• Fixed magnet: 0.51T
• "Visible illumination" photonic module (LED R,G,B)
• External source adapter (UV, IR)

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials
- Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic