LAYER CHARACTERIZATIONHall effect measurement systemsStandard systems

HMS5500 Semi-automatic Hall Effect measurement system for very high temperatures

Part Number

HMS5500

Designation

Semi-automatic Hall Effect measurement system for very high temperatures

APPLICATIONS

Hall Effect Measurements and other parameters

Description

Discover our HMS5500 semi-automatic Hall effect system, designed for studying and characterizing the electrical properties of semiconductor materials and thin films at varying temperatures. This educational and experimental equipment allows for the precise analysis of charge carrier mobility, carrier concentration, and sample resistivity.

By measuring the voltages generated under the influence of Lorentz forces via its permanent magnet module, the system provides a concrete understanding of electronic transport phenomena and the effects of material doping. Compatible with the Van der Pauw method, it enables reliable measurements on various geometries and thin films.

Robust and easy to use, this manual Hall effect system is ideal for higher education laboratories, research centers, and characterization applications in semiconductor physics and materials science.

Its semi-automatic temperature ramp system and magnetic field measurements make it completely autonomous during the measurement process.

It is therefore possible to calculate:

• Charge carrier mobility
• Majority carrier density (dopants)
• Doping type (P/N ratio)
• Hall voltage / Hall coefficient
• Surface resistance, resistivity, conductivity

Features:

• Sample size: 5x5mm - 20x20mm
• Motorized dual magnets: 0.5T
• Measurement under temperature: 77K to 350K
• Current range: 1nA - 20mA

Compatibles temperature modules:

- AMP55T-RTSK: Ambient or 77K
- AMP55T-SH80350K: From 77K to 350K
- AHT55T3: From 300K to 570K
- AHT55T5: From 300K to 770K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component - Nanomaterials
- Sensors, MEMS - Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

DOCUMENTS

HMS5500 hall effect measurement system (pdf)

Technical Specifications

Sample size

5x5 to 20x20 mm

Maximum sample thickness

2 mm

Magnet power

0.5 T

Magnet type

Permanent

Magnet material

Neodym

Magnet diameter

50 mm

Magnet movement

Automatic

Temperature range

77K to 770K, upon model

SMU

Internal

Current range

1nA to 20mA

Maximum voltage

10 V

Resistivity range

10E-4 to 10E7 ohm.cm

Concentration range

10E7 to 10E21 cm-3

Mobility range

1 to 10E7 cm2/Vs

Software

Yes (Windows)

License

Multi-users

IV curves

Yes

Parameters calculation

R, Res, Mob, Concentration, Hall

Temperature ramp

Yes

Data export

CSV

Communication

USB

Computer

Not included (optional)

Electrical requirements

230VAC - 50Hz - Mono - 2A

Dimensions

700 x 800 x 200 mm

Weight

30 Kg

Associated products

SPCBSample holder for HMS series

These easy probe holders are composed of a small pcb on which the sample under test is held using spring clips.
The sample to measure is square with a pretty small size.

- Four individually adjustable gold plated spring needles allow a good electrical contact on each corner (may need a point of Indium solder deposited for better contact, not always necessary, depends on sample material).
- No soldering necessary

HMS5000Semi-automatic Hall Effect measurement system with temperature

The HMS5000 is a motorized Hall effect measurement system dedicated to the electrical characterization of semiconductor materials using the Van der Pauw method. Designed to accommodate samples of varying compositions and geometries, it enables the precise extraction of numerous essential electrical parameters.
Compatible with temperature measurements from 77 K to 350 K, the HMS5000 offers a complete solution for the analysis of semiconductor thin films.

Thanks to its versatility, the system is suitable for both research activities and development and quality control applications in the fields of advanced materials and microelectronics.

The HMS5000 also integrates dedicated software that verifies the quality of ohmic contacts through the automatic plotting of I-V curves, thus ensuring the reliability and reproducibility of measurements. It also allows for the management of magnet movement and temperature ramps to plot the response of your sample.

It is therefore possible to calculate:

• Charge carrier mobility
• Majority carrier density (dopants)
• Doping type (P/N ratio)
• Hall voltage / Hall coefficient
• Surface resistance, resistivity, conductivity

Features:

• Sample size: 5x5mm - 20x20mm
• Motorized dual magnets: 0.5T
• Measurement under temperature: 77K to 350K
• Current range: 1nA - 20mA

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

HMS5300Semi-automatic Hall Effect measurement system for high temperatures

Discover our HMS5300 semi-automatic Hall effect system, designed for studying and characterizing the electrical properties of semiconductor materials and thin films at varying temperatures. This educational and experimental equipment allows for the precise analysis of charge carrier mobility, carrier concentration, and sample resistivity.

By measuring the voltages generated under the influence of Lorentz forces via its permanent magnet module, the system provides a concrete understanding of electronic transport phenomena and the effects of material doping. Compatible with the Van der Pauw method, it enables reliable measurements on various geometries and thin films.

Robust and easy to use, this manual Hall effect system is ideal for higher education laboratories, research centers, and characterization applications in semiconductor physics and materials science.

Its semi-automatic temperature ramp system and magnetic field measurements make it completely autonomous during the measurement process.

It is therefore possible to calculate:

• Charge carrier mobility
• Majority carrier density (dopants)
• Doping type (P/N ratio)
• Hall voltage / Hall coefficient
• Surface resistance, resistivity, conductivity

Features:

• Sample size: 5x5mm - 20x20mm
• Motorized dual magnets: 0.5T
• Measurement under temperature: 77K to 350K
• Current range: 1nA - 20mA

Compatibles temperature modules:

- AMP55T-RTSK: Ambient or 77K
- AMP55T-SH80350K: From 77K to 350K
- AHT55T3: From 300K to 570K
- AHT55T5: From 300K to 770K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component - Nanomaterials
- Sensors, MEMS - Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

HMS7000Photonic Hall Effect measurement system

The HMS7000 Photonics will this time use the Van Der Pauw method under illumination to measure the response of several internal parameters of the material under different photonic stresses. This equipment is perfectly suited to the world of photovoltaics and the study of photoelectric semiconductors.

As for the other HMS series, it will characterize:

• Mobility of charge carriers
• Density of majority carriers
• The type of doping (P/N)
• Hall Voltage / Hall Coefficient
• Surface resistances, resistivity

Specifications:

• Fixed magnet: 0.51T
• "Visible illumination" photonic module (LED R,G,B)
• External source adapter (UV, IR)

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials
- Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes -
Photovoltaic