HMS3000      Manual Hall Effect measurement system

HMS3000 : Manual Hall Effect measurement system
HMS3000 : Manual Hall Effect measurement system
HMS3000 : Manual Hall Effect measurement system
HMS3000 : Manual Hall Effect measurement system
HMS3000 : Manual Hall Effect measurement system
HMS3000 : Manual Hall Effect measurement system
HMS3000 : Manual Hall Effect measurement system
HMS3000 : Manual Hall Effect measurement system
HMS3000 : Manual Hall Effect measurement system
HMS3000 : Manual Hall Effect measurement system

Part Number

HMS3000

Designation

Manual Hall Effect measurement system

Description

The HMS3000 is a manual device for Hall effect measurement of resistivity, mobility, carrier concentration, Hall effect coefficient...
It uses the Van Der Pauw method and makes it possible to characterize semiconductor layers of different thicknesses.
This ultra-compact equipment is compatible with several magnet kits (0.31T, 0.37T, 0.51T, 1T) but also with a variable magnet module.
The HMS3000 includes software capable of checking the quality of ohmic contacts by plotting I-V curves.

Features:


- Sample size: 5x5mm to 25x25 mm
- Measurement at two temperatures, ambient (ambient temperature) and 77K
- Magnet
- LN2 chamber with funnel
- ITO reference sample
- Different SPCB sample holders depending on the application

Module # EVM-100
Field: 0.25~0.9T at room temperature
Field: 0.25~0.5T at room temperature and 77K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

DOCUMENTS

Technical Specifications

Sample size

5x5 to 25x25 mm

Maximum sample thickness

2.5 mm

Magnet power

0.5 T

Magnet type

Permanent

Magnet material

Neodym

Magnet diameter

50 mm

Magnet movement

Manual

Temperature range

Ambient and 77K

SMU

Internal

Current range

1nA to 20mA

Resistivity range

10E-4 to 10E7 ohm.cm

Concentration range

10E7 to 10E21 cm-3

Mobility range

1 to 10E7 cm2/Vs

Software

Yes (Windows)

License

Multi-users

IV curves

Yes

Parameters calculation

R, Res, Mob, Concentration, Hall

Temperature ramp

No

Data export

CSV

Computer

Not included (optional)

Electrical requirements

230VAC - 50Hz - Mono - 1A

Included sample holder

SPCB01 (max 2.5mm thick samples)

Associated products

Sample holder for HMS series

SPCBSample holder for HMS series

These easy probe holders are composed of a small pcb on which the sample under test is held using spring clips.
The sample to measure is square with a pretty small size.


- Four individually adjustable gold plated spring needles allow a good electrical contact on each corner (may need a point of Indium solder deposited for better contact, not always necessary, depends on sample material).
- No soldering necessary
Semi-automatic Hall Effect measurement system with temperature

HMS5000Semi-automatic Hall Effect measurement system with temperature

The HMS5000 model is a compact tabletop system that uses the Van Der Pauw method to extract a number of internal parameters from samples of varying composition and geometry.
Compatible with temperature measurements ranging from 77K to 350K, this equipment makes it possible to characterize the resistivity, mobility, charge carrier density, Hall coefficient of a wide range of thin semiconductor layers.
The HMS5000 includes software capable of checking the quality of ohmic contacts by plotting I-V curves.

Characteristic:

- Sample size: 5x5mm - 30x30mm
- Fixed magnet: 0.55T
- Measurement in cold temperature
- Current range: 1nA - 20mA

Compatibles temperature modules:

- AMP55T-RTSK: Ambient or 77K
- AMP55T-SH80350R: From 77K to 350K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic
Manual Hall Effect measurement system  for high temperatures

HMS3300Manual Hall Effect measurement system for high temperatures

The HMS3300 is a manual device for Hall effect measurement of resistivity, mobility, carrier concentration, Hall effect coefficient...
It uses the Van Der Pauw method and makes it possible to characterize semiconductor layers of different thicknesses.
This ultra-compact equipment is compatible with several magnet kits (0.31T, 0.37T, 0.51T, 1T) but also with a variable magnet module.
The HMS3000 includes software capable of checking the quality of ohmic contacts by plotting I-V curves.

Features:


- Sample size: 5x5mm to 25x25 mm
- Measurement at two temperatures, ambient (ambient temperature) and 77K
- Magnet
- LN2 chamber with funnel
- ITO reference sample
- Different SPCB sample holders depending on the application

Module # EVM-100
Field: 0.25~0.9T at room temperature
Field: 0.25~0.5T at room temperature and 77K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic
Manual Hall Effect measurement system  for very high temperatures

HMS3500Manual Hall Effect measurement system for very high temperatures

The HMS3500 is a manual device for Hall effect measurement of resistivity, mobility, carrier concentration, Hall effect coefficient...
It uses the Van Der Pauw method and makes it possible to characterize semiconductor layers of different thicknesses.
This ultra-compact equipment is compatible with several magnet kits (0.31T, 0.37T, 0.51T, 1T) but also with a variable magnet module.
The HMS3000 includes software capable of checking the quality of ohmic contacts by plotting I-V curves.

Features:


- Sample size: 5x5mm to 25x25 mm
- Measurement at two temperatures, ambient (ambient temperature) and 77K
- Magnet
- LN2 chamber with funnel
- ITO reference sample
- Different SPCB sample holders depending on the application

Module # EVM-100
Field: 0.25~0.9T at room temperature
Field: 0.25~0.5T at room temperature and 77K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic
For technical and commercial information, quote, ordering or request of visit by our representative. +33 (0)476 561 617

5 rue de la Verrerie

38120 Le Fontanil-Cornillon

Grenoble / France

Fax : +33(0) 476 757 484

RCS Grenoble B 381 001 171 - APE 4652Z

TVA FR 48 381 001 171