LAYER CHARACTERIZATIONHall effect measurement systemsStandard systems

HMS3000 Manual Hall Effect measurement system

Part Number

HMS3000

Designation

Manual Hall Effect measurement system

APPLICATIONS

Hall Effect Measurements and other parameters

Description

The HMS3000 is a manual device for Hall effect measurement of resistivity, mobility, carrier concentration, Hall effect coefficient...
It uses the Van Der Pauw method and makes it possible to characterize semiconductor layers of different thicknesses.
This ultra-compact equipment is compatible with several magnet kits (0.31T, 0.37T, 0.51T, 1T) but also with a variable magnet module.
The HMS3000 includes software capable of checking the quality of ohmic contacts by plotting I-V curves.

Features:

- Sample size: 5x5mm to 20x20 mm
- Measurement at two temperatures, ambient (ambient temperature) and 77K
- Magnet
- LN2 chamber with funnel
- ITO reference sample
- Different SPCB sample holders depending on the application

Module # EVM-100
Field: 0.25~0.9T at room temperature
Field: 0.25~0.5T at room temperature and 77K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

DOCUMENTS

HMS3000 hall effect measurement system (pdf)

Technical Specifications

Sample size

5x5 to 20x20 mm

Maximum sample thickness

2 mm

Magnet power

0.31 - 0.37 - 0.51 or 1 T

Magnet type

Permanent

Magnet material

Neodym

Magnet movement

Manual

Temperature range

Ambient and 77K

SMU

Internal

Current range

1nA to 20mA

Maximum voltage

10 V

Resistivity range

10E-4 to 10E7 ohm.cm

Concentration range

10E7 to 10E21 cm-3

Mobility range

1 to 10E7 cm2/Vs

Software

Yes (Windows)

License

Multi-users

IV curves

Yes

Parameters calculation

R, Res, Mob, Concentration, Hall

Temperature ramp

Data export

CSV

Communication

USB

Computer

Not included (optional)

Electrical requirements

230VAC - 50Hz - Mono - 1A

Dimensions

460 x 390 x 350 mm

Weight

12 Kg

Associated products

SPCBSample holder for HMS series

These easy probe holders are composed of a small pcb on which the sample under test is held using spring clips.
The sample to measure is square with a pretty small size.

- Four individually adjustable gold plated spring needles allow a good electrical contact on each corner (may need a point of Indium solder deposited for better contact, not always necessary, depends on sample material).
- No soldering necessary

HMS5000Semi-automatic Hall Effect measurement system with temperature

The HMS5000 model is a compact tabletop system that uses the Van Der Pauw method to extract a number of internal parameters from samples of varying composition and geometry.
Compatible with temperature measurements ranging from 77K to 350K, this equipment makes it possible to characterize the resistivity, mobility, charge carrier density, Hall coefficient of a wide range of thin semiconductor layers.
The HMS5000 includes software capable of checking the quality of ohmic contacts by plotting I-V curves.

Characteristic:

- Sample size: 5x5mm - 20x20mm
- Fixed magnet: 0.55T
- Measurement in cold temperature
- Current range: 1nA - 20mA

Compatibles temperature modules:

- AMP55T-RTSK: Ambient or 77K
- AMP55T-SH80350R: From 77K to 350K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

HMS7000Photonic Hall Effect measurement system

The HMS7000 Photonics will this time use the Van Der Pauw method under illumination to measure the response of several internal parameters of the material under different photonic stresses. This equipment is perfectly suited to the world of photovoltaics and the study of photoelectric semiconductors.

As for the other HMS series, it will characterize:

• Mobility of charge carriers
• Density of majority carriers
• The type of doping (P/N)
• Hall Voltage / Hall Coefficient
• Surface resistances, resistivity

Specifications:

• Fixed magnet: 0.51T
• "Visible illumination" photonic module (LED R,G,B)
• External source adapter (UV, IR)

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials
- Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes -
Photovoltaic