LAYER CHARACTERIZATIONHall effect measurement systemsStandard systems

HMS3000 Manual Hall Effect measurement system

Part Number

HMS3000

Designation

Manual Hall Effect measurement system

APPLICATIONS

Hall Effect Measurements and other parameters

Description

Discover our HMS3000 manual Hall effect system, designed for studying and characterizing the electrical properties of semiconductor materials and thin films. This educational and experimental equipment allows for the precise analysis of charge carrier mobility, carrier concentration, and resistivity of samples.

By measuring the voltages generated by Lorentz forces via its permanent magnet module, the system provides a concrete understanding of electronic transport phenomena and the effects of material doping. Compatible with the Van der Pauw method, it enables reliable measurements on various geometries and thin films.

Robust and easy to use, this manual Hall effect system is ideal for higher education laboratories, research centers, and characterization applications in semiconductor physics and materials science.

It is thus possible to calculate:

• Charge carrier mobility
• Majority carrier density (dopants)
• Doping type (P/N ratio)
• Hall voltage / Hall coefficient
• Surface resistances, resistivity, conductivity

Features:

• Sample size: 5x5 mm to 20x20 mm
• Measurement at two temperatures: ambient and 77 K
• Single or double magnet
• LN2 chamber
• ITO reference sample
• Different SPCB sample holders depending on the application

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

DOCUMENTS

HMS3000 hall effect measurement system (pdf)

Technical Specifications

Sample size

5x5 to 20x20 mm

Maximum sample thickness

2 mm

Probe tips quantity

4 x gold plated pogo-pin

Magnet power

0.31 - 0.37 - 0.51 or 1 T

Magnet type

Permanent

Magnet material

Neodym

Magnet movement

Manual

Temperature range

Ambient and 77K

SMU

Internal

Current range

1nA to 20mA

Maximum voltage

10 V

Resistivity range

10E-4 to 10E7 ohm.cm

Concentration range

10E7 to 10E21 cm-3

Mobility range

1 to 10E7 cm2/Vs

Software

Yes (Windows)

License

Multi-users

IV curves

Yes

Parameters calculation

R, Res, Mob, Concentration, Hall

Temperature ramp

Data export

CSV

Communication

USB

Computer

Not included (optional)

Electrical requirements

230VAC - 50Hz - Mono - 1A

Dimensions

400 x 450 x 120 mm

Weight

9 Kg

Associated products

SPCBSample holder for HMS series

Optimize your characterization campaigns with our sample holders specifically designed for Hall effect measurements.

Equipped with four gold-plated spring contacts (pogo pins), it ensures reliable, reproducible, and damage-free contact with samples.
Thanks to the controlled contact force of the spring contacts, sample installation is quick and requires no soldering or permanent fixing. This design guarantees excellent electrical stability while compensating for variations in thickness and dimensional tolerances of the materials being tested.

HMS5000Semi-automatic Hall Effect measurement system with temperature

The HMS5000 is a motorized Hall effect measurement system dedicated to the electrical characterization of semiconductor materials using the Van der Pauw method. Designed to accommodate samples of varying compositions and geometries, it enables the precise extraction of numerous essential electrical parameters.
Compatible with temperature measurements from 77 K to 350 K, the HMS5000 offers a complete solution for the analysis of semiconductor thin films.

Thanks to its versatility, the system is suitable for both research activities and development and quality control applications in the fields of advanced materials and microelectronics.

The HMS5000 also integrates dedicated software that verifies the quality of ohmic contacts through the automatic plotting of I-V curves, thus ensuring the reliability and reproducibility of measurements. It also allows for the management of magnet movement and temperature ramps to plot the response of your sample.

It is therefore possible to calculate:

• Charge carrier mobility
• Majority carrier density (dopants)
• Doping type (P/N ratio)
• Hall voltage / Hall coefficient
• Surface resistance, resistivity, conductivity

Features:

• Sample size: 5x5mm - 20x20mm
• Motorized dual magnets: 0.5T
• Measurement under temperature: 77K to 350K
• Current range: 1nA - 20mA

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic

HMS7000Photonic Hall Effect measurement system

Our HMS7000 semi-automatic photonic Hall effect system is designed for the study and characterization of the electrical properties of semiconductor materials and thin films under illumination. This educational and experimental equipment allows for the precise analysis of charge carrier mobility, carrier concentration, and resistivity of samples.

By measuring the voltages generated by Lorentz forces via its permanent magnet module, the system provides a concrete understanding of electronic transport phenomena and the effects of material doping. Compatible with the Van der Pauw method, it enables reliable measurements on various geometries and thin films.

Photonic illumination, using three LEDs of different colours, generates additional charge carriers (electrons/holes) in the semiconductor, which enhances or modulates the Hall effect response.

Robust and easy to use, this manual Hall effect system is ideal for higher education laboratories, research centers, and characterization applications in semiconductor physics and materials science.

It allows for the calculation of:

• Charge carrier mobility
• Majority carrier density (dopants)
• Doping type (P/N)
• Hall voltage / Hall coefficient
• Surface resistance, resistivity, and conductivity

Features:

• Fixed magnet: 0.51T
• "Visible illumination" photonic module (LED R,G,B)
• External source adapter (UV, IR)

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials
- Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic