RTP1200      1200°C Rapid Thermal Processor

RTP1200 : 1200°C Rapid Thermal Processor RTP1200 : 1200°C Rapid Thermal Processor
RTP1200 : 1200°C Rapid Thermal Processor RTP1200 : 1200°C Rapid Thermal Processor
RTP1200 : 1200°C Rapid Thermal Processor RTP1200 : 1200°C Rapid Thermal Processor
RTP1200 : 1200°C Rapid Thermal Processor RTP1200 : 1200°C Rapid Thermal Processor

Part Number

RTP1200

Designation

1200°C Rapid Thermal Processor

Description

The RTP1200 model is a very easy and powerful RTP system able to reach very high temperatures by using 4 tungsten-halogen lamps.

- Temperature speed adjustment
- System under vacuum
- Gas input possible
- Ideal for contact optimization

Technical Specifications

Sample size

15x20 mm

Maximum temperature

1200 °C

Rise time

100°C/s °C/s

Accuracy

+/- 0.3 °C °C

Lamp type

Halogen 4x150W@15V (600W total)

Maximum current

40 A

Voltage supply

230V monophase V

Cooling

By fan

Gas inlet

N2 and O2 (controller not included)

Associated products

Semi-automatic Hall Effect measurement system with temperature

HMS5000Semi-automatic Hall Effect measurement system with temperature

The HMS5000 model is a compact tabletop system that uses the Van Der Pauw method to extract a number of internal parameters from samples of varying composition and geometry.
Compatible with temperature measurements ranging from 77K to 350K, this equipment makes it possible to characterize the resistivity, mobility, charge carrier density, Hall coefficient of a wide range of thin semiconductor layers.
The HMS5000 includes software capable of checking the quality of ohmic contacts by plotting I-V curves.

Characteristic:

- Sample size: 5x5mm - 30x30mm
- Fixed magnet: 0.55T
- Measurement in cold temperature
- Current range: 1nA - 20mA

Compatibles temperature modules:

- AMP55T-RTSK: Ambient or 77K
- AMP55T-SH80350R: From 77K to 350K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials - Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic
Semi-automatic Hall Effect measurement system for high temperatures

HMS5300Semi-automatic Hall Effect measurement system for high temperatures

The HMS5300 model is a compact tabletop system that uses the Van Der Pauw method to extract a number of internal parameters from samples of varying composition and geometry.
Compatible with temperature measurements ranging from 77K to 570K, this equipment makes it possible to characterize the resistivity, mobility, charge carrier density, Hall coefficient of a wide range of thin semiconductor layers.
The HMS5300 includes software capable of checking the quality of ohmic contacts by plotting I-V curves

Characteristic:

- Sample size: 5x5mm - 30x30mm
- Fixed magnet: 0.55T
- Temperature Measurement
- Current range: 1nA - 20mA

Compatibles temperature modules:

- AMP55T-RTSK: Ambient or 77K
- AMP55T-SH80350R: From 77K to 350K
- AHT55T3: From 300K to 570K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component - Nanomaterials
- Sensors, MEMS - Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic
Semi-automatic Hall Effect measurement system for very high temperatures

HMS5500Semi-automatic Hall Effect measurement system for very high temperatures

The HMS5500 model is a compact tabletop system that uses the Van Der Pauw method to extract a number of internal parameters from samples of varying composition and geometry.
Compatible with temperature measurements ranging from 77K to 770K, this equipment makes it possible to characterize the resistivity, mobility, charge carrier density, Hall coefficient of a wide range of thin semiconductor layers.
The HMS5500 includes software capable of checking the quality of ohmic contacts by plotting I-V curves.

Characteristics:

- Sample size: 5x5mm - 30x30mm
- Fixed magnet: 0.55T
- Temperature Measurement
- Current range: 1nA - 20mA

Compatibles temperature modules:

- AMP55T-RTSK: Ambient or 77K
- AMP55T-SH80350R: From 77K to 350K
- AHT55T3: From 300K to 570K
- AHT55T5: From 300K to 770K

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component - Nanomaterials
- Sensors, MEMS - Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes
- Photovoltaic
Photonic Hall Effect measurement system

HMS7000Photonic Hall Effect measurement system

The HMS7000 Photonics will this time use the Van Der Pauw method under illumination to measure the response of several internal parameters of the material under different photonic stresses. This equipment is perfectly suited to the world of photovoltaics and the study of photoelectric semiconductors.

As for the other HMS series, it will characterize:

• Mobility of charge carriers
• Density of majority carriers
• The type of doping (P/N)
• Hall Voltage / Hall Coefficient
• Surface resistances, resistivity

Specifications:

• Fixed magnet: 0.51T
• "Visible illumination" photonic module (LED R,G,B)
• External source adapter (UV, IR)

Applications:

- Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs
- Optoelectronic component
- Nanomaterials
- Sensors, MEMS
- Conductive polymer
- Oxide deposit
- Ceramic & Glass
- Batteries
- Electrodes -
Photovoltaic
For technical and commercial information, quote, ordering or request of visit by our representative.
+33 (0)476 561 617

5 rue de la Verrerie

38120 Le Fontanil-Cornillon

Grenoble / France

Fax : +33(0) 476 757 484

RCS Grenoble B 381 001 171 - APE 4652Z

TVA FR 48 381 001 171